Title :
Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence
Author :
White, B.D. ; Bataiev, M. ; Goss, S.H. ; Hu, X. ; Karmarkar, A. ; Fleetwood, D.M. ; Schrimpf, R.D. ; Schaff, W.J. ; Brillson, L.J.
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
We have characterized high-electron mobility transistors and corresponding unprocessed material as a function of 1.8 MeV proton fluence. Electrical data shows degradation of the electrical contacts at low fluences (1011-1014 p+/cm2) and degradation of the channel properties for higher fluences. In conjunction with the electrical data, cathodoluminescence and secondary-ion mass spectrometry results suggest mechanisms for the higher fluence degradation.
Keywords :
III-V semiconductors; aluminium compounds; cathodoluminescence; electrical conductivity; gallium compounds; high electron mobility transistors; proton effects; radiation hardening (electronics); wide band gap semiconductors; 1.8 MeV; 1.8 MeV proton irradiated AlGaN/GaN HEMT structures; AlGaN-GaN; cathodoluminescence; chemical properties; electrical contacts; electrical properties; high-electron mobility transistors; higher fluence degradation; secondary-ion mass spectrometry; spectral properties; Aluminum gallium nitride; Chemicals; Contacts; Degradation; Epitaxial layers; Gallium nitride; HEMTs; MODFETs; Mass spectroscopy; Protons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821827
