Author :
Tuominen, E. ; Härkönen, J. ; Tuovinen, E. ; Lassila-Perini, K. ; Luukka, P. ; Mehtälä, P. ; Nummela, S. ; Nysten, J. ; Zibellini, A. ; Li, Z. ; Heikkilä, P. ; Ovchinnikov, V. ; Yli-Koski, M. ; Laitinen, P. ; Pirojenko, A. ; Riihimäki, I. ; Virtanen, A.
Abstract :
We have processed pin-diodes on Czochralski silicon (Cz-Si), standard float zone silicon (Fz-Si), and diffusion oxygenated float zone silicon (DOF) and irradiated them with 10- and 20-MeV protons. Evolutions of depletion voltage and leakage current as a function of irradiation dose were measured. Space charge sign inversion (SCSI) was investigated by an annealing study and verified by transient current technique (TCT). Czochralski silicon was found to be significantly more radiation hard than the other materials.
Keywords :
annealing; crystal growth from melt; elemental semiconductors; leakage currents; proton effects; radiation hardening (electronics); silicon; space charge; 10 MeV; 20 MeV; Czochralski Si; Si; depletion voltage; leakage current; pin-diodes; radiation hardness; space charge sign inversion; standard float zone Si; transient current technique; Conductivity; Current measurement; Laboratories; Leakage current; Physics; Protons; Radiation detectors; Silicon; Space charge; Voltage;
