• DocumentCode
    879465
  • Title

    Neutron irradiation effects in GaN-based blue LEDs

  • Author

    Li, ChyiShiun ; Subramanian, S.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    1998
  • Lastpage
    2002
  • Abstract
    The neutron irradiation effects in GaN-based double heterojunction (DH) light-emitting diodes (LEDs) are investigated. Both optical and electrical properties showed significant degradation after neutron irradiation. The basic mechanisms responsible for both electrical and optical degradation are discussed. Some optical and electrical recovery due to an injection-enhanced annealing effect is observed in our irradiated LEDs.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; neutron effects; radiation hardening (electronics); wide band gap semiconductors; GaN; GaN-based blue LEDs; double heterojunction light-emitting diodes; electrical properties; neutron irradiation effects; optical properties; Annealing; DH-HEMTs; Degradation; Gallium nitride; Heterojunctions; Light emitting diodes; Neutrons; Optical materials; Protons; Radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821610
  • Filename
    1263833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879465