Title :
Single particle dark current spikes induced in CCDs by high energy neutrons
Author :
Chugg, A.M. ; Jones, R. ; Moutrie, M.J. ; Armstrong, J.R. ; King, D.B.S. ; Moreau, N.
Author_Institution :
Radiat. Effects Group, MBDA U.K. Ltd., Bristol, UK
Abstract :
This paper presents an analysis of dark signal nonuniformity induced in a charge coupled device (CCD) by 90 MeV neutrons. Random telegraph signal switching between multiple levels was seen for some dark current spikes. The probability distribution of the dark current spikes is shown to be pseudo-exponential and the distribution remains exponential during annealing, but with an increasing decay constant. Similar dark current spikes were also observed to be generated in an APS device exposed to high energy neutrons at the WNR facility.
Keywords :
annealing; charge-coupled devices; dark conductivity; energy loss of particles; neutron effects; radiation hardening (electronics); semiconductor device noise; 90 MeV; CCDs; annealing; dark signal nonuniformity; distribution; high energy neutrons; increasing decay constant; probability distribution; pseudo-exponential; random telegraph signal switching; single particle dark current spikes; Annealing; Charge coupled devices; Dark current; Neutrons; Particle beams; Probability distribution; Protons; Sensor arrays; Signal analysis; Telegraphy;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821813
