Title :
14-MeV neutron and Co60 gamma testing of a power MOSFET optocoupler
Author :
McMarr, P.J. ; Nelson, M.E. ; Hughes, H. ; Delikat, K.J.
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
The effect of radiation from neutron activation of package materials was studied using a power MOSFET optocoupler as the test device. The optocouplers were exposed to 14-MeV neutrons to a fluence of 1×1011 n/cm2, with the devices switching during exposure. Electrical characterization was performed after each neutron exposure. A separate set of optocouplers was then irradiated using a Co60 source. These results combined with gamma ray spectroscopy showed that radiation from neutron activation had a significant effect on the electrical parameters of the optocouplers.
Keywords :
gamma-ray effects; integrated optoelectronics; neutron effects; optical couplers; power MOSFET; radiation hardening (electronics); 14 MeV; 14-MeV neutrons; electrical characterization; gamma ray spectroscopy; gamma-ray effects; neutron activation; package materials; power MOSFET optocoupler; Laboratories; Leakage current; MOSFET circuits; Neutrons; Packaging; Performance evaluation; Power MOSFET; Radiation effects; Switches; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821394
