• DocumentCode
    879545
  • Title

    Contribution of SiO2 in neutron-induced SEU in SRAMs

  • Author

    Wrobel, F. ; Palau, J.-M. ; Calvet, M.-C. ; Iacconi, P.

  • Author_Institution
    LPES-CRESA, Nice Univ., France
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2055
  • Lastpage
    2059
  • Abstract
    The aim of this work is to show the contribution of nuclear events occurring with oxygen nuclei in SRAM-oxide such as SiO2 and emphasize that they are likely to increase the soft error rate by about several tens of percent. Recoil energies are calculated with a dedicated subroutine, which accounts for elastic and nonelastic reactions in the 5-150-MeV energy range. SEU cross sections are evaluated using the criterion of critical energy deposited in a cubic sensitive volume.
  • Keywords
    Monte Carlo methods; SRAM chips; neutron effects; passivation; radiation hardening (electronics); silicon compounds; 5 to 150 MeV; Monte Carlo; SRAMs; SiO2; critical energy; cubic sensitive volume; neutron-induced SEU; nonelastic reactions; recoil energies; single event upset; soft error rate; Algorithms; Atomic layer deposition; Error analysis; Insulation; Neutrons; Optical sensors; Passivation; Random access memory; Silicon on insulator technology; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821596
  • Filename
    1263841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879545