• DocumentCode
    879602
  • Title

    Single event effects in PDSOI 4 M SRAM fabricated in UNIBOND

  • Author

    Liu, S.T. ; Heikkila, W.W. ; Golke, K.W. ; Anthony, D. ; Hurst, A. ; Kirchner, G. ; Jenkins, W.C. ; Hughes, H.L. ; Mitra, S. ; Ioannou, D.E.

  • Author_Institution
    Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    2095
  • Lastpage
    2100
  • Abstract
    Heavy ion and proton single event upsets of 4 M SOI SRAM with a hardened delay element in each memory cell were evaluated. These 4 M SRAM were fabricated in UNIBOND substrates using a radiation hardened partially depleted silicon-on-insulator CMOS technology. Limiting heavy ion upset cross-section of 1.2×10-10 cm2/bit has been achieved. Limiting proton upset cross-section of 1.1×10-17 cm2/bit has also been obtained.
  • Keywords
    SRAM chips; ion beam effects; proton effects; radiation hardening (electronics); silicon-on-insulator; CMOS technology; PDSOI 4 M SRAM; UNIBOND; each memory cell; hardened delay element; heavy ion single event upsets; proton single event upsets; single event effects; CMOS technology; Delay; Dielectric substrates; Energy measurement; Laboratories; Protons; Radiation hardening; Random access memory; Silicon on insulator technology; Single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.821832
  • Filename
    1263847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=879602