Title :
Accuracy of relaxation time approximation for device simulation of submicrometre GaAs MESFETs
Author :
Yamada, Y. ; Tomita, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Kumamoto Univ., Japan
Abstract :
The accuracy of some models based on the relaxation time approximation is studied in a transient device simulation of submicrometre GaAs MESFETs using an ensemble Monte-Carlo simulation. It is shown that contributions of the outflow of momentum density v. Delta v and the kinetic energy m*v2/2 are not negligibly small.
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; carrier relaxation time; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; device simulation; ensemble Monte-Carlo simulation; kinetic energy; models; momentum density; relaxation time approximation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920246
