DocumentCode :
879694
Title :
SEU mitigation for half-latches in Xilinx Virtex FPGAs
Author :
Graham, Paul ; Caffrey, Michael ; Johnson, D. Eric ; Rollins, Nathaniel ; Wirthlin, Michael
Author_Institution :
Los Alamos Nat. Lab., NM, USA
Volume :
50
Issue :
6
fYear :
2003
Firstpage :
2139
Lastpage :
2146
Abstract :
The performance, in-system reprogrammability, flexibility, and reduced costs of SRAM-based field programmable gate arrays (FPGAs) make them very interesting for high-speed on-orbit data processing, but the current generation of radiation-tolerant SRAM-based FPGAs are based on commercial-off-the-shelf technologies and, consequently, are susceptible to single-event upset effects. In this paper, we discuss in detail the consequences of radiation-induced single-event upsets (SEUs) in the state of half-latch structures found in Xilinx Virtex FPGAs and describe methods for mitigating the effects of half-latch SEUs. One mitigation method´s effectiveness is then illustrated through experimental data gathered through proton accelerator testing at Crocker Nuclear Laboratory, University of California-Davis. For the specific design and mitigation methodology tested, the mitigated design demonstrated more than an order of magnitude improvement in reliability over the unmitigated version of the design in regards to average proton fluence until circuit failure.
Keywords :
field programmable gate arrays; proton effects; radiation hardening (electronics); SEU mitigation; SRAM-based field programmable gate arrays; Xilinx Virtex FPGAs; average proton fluence; circuit failure; flexibility; half-latch structures; half-latches; high-speed on-orbit data processing; in-system reprogrammability; performance; reduced costs; single-event upset effects; Circuit testing; Costs; Data processing; Field programmable gate arrays; Laboratories; Logic design; Proton accelerators; Random access memory; Redundancy; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.820744
Filename :
1263854
Link To Document :
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