DocumentCode :
879732
Title :
A Novel 4.5 
Capacitorless Semiconductor Memory Device
Author :
Wang, Peng-Fei ; Gong, Yi
Author_Institution :
Oriental Semicond. Technol. Co., Ltd., Shanghai
Volume :
29
Issue :
12
fYear :
2008
Firstpage :
1347
Lastpage :
1348
Abstract :
This letter proposes a novel 4.5F2 capacitorless dynamic random access memory cell with a floating gate (FG) connected to drain via a gated p-n junction diode. The FG in the proposed memory device is for charge storage and can electrically be charged or discharged by current flowing through a gated p-n junction diode.
Keywords :
DRAM chips; memory architecture; semiconductor devices; capacitorless dynamic random access memory cell; capacitorless semiconductor memory device; charge storage; floating gate; Capacitorless dynamic random access memory (DRAM); MOSFET; floating-body cell;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2005740
Filename :
4637839
Link To Document :
