Title :
Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-μm SiGe heterojunction bipolar transistors and circuits
Author :
Reed, Robert A. ; Marshall, Paul W. ; Pickel, James C. ; Carts, Martin A. ; Fodness, Bryan ; Niu, Guofu ; Fritz, Karl ; Vizkelethy, Gyorgy ; Dodd, Paul E. ; Irwin, Tim ; Cressler, John D. ; Krithivasan, Ramkumar ; Riggs, Pamela ; Prairie, Jason ; Randall,
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
Combining broad-beam circuit level single-event upset (SEU) response with heavy ion microprobe charge collection measurements on single silicon-germanium heterojunction bipolar transistors improves understanding of the charge collection mechanisms responsible for SEU response of digital SiGe HBT technology. This new understanding of the SEU mechanisms shows that the right rectangular parallel-piped model for the sensitive volume is not applicable to this technology. A new first-order physical model is proposed and calibrated with moderate success.
Keywords :
Ge-Si alloys; bipolar integrated circuits; heterojunction bipolar transistors; ion beam effects; radiation hardening (electronics); 0.20 micron; 0.20-μm SiGe heterojunction bipolar transistors; SiGe; charge collection mechanisms; heavy-ion broad-beam irradiation; heterojunction bipolar transistor circuits; microprobe studies; right rectangular parallel-piped model; sensitive volume; single-event upsets; Bandwidth; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Logic; Microelectronics; NASA; Silicon germanium; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821815
