A model for the computer-aided noise analysis of broad-banded bipolar circuits

A model suitable for the prediction of equivalent input noise voltage, equivalent input noise current, and noise figure of narrow geometry integrated bipolar devices is presented. The bipolar model accounts for flicker phenomena and the low frequency current gain attenuation commonly observed at very low and at very high injection levels. Moreover, a first-order approximation to the dependence of intrinsic base resistance on transistor current level is analytically incorporated. Experimental results are offered and compared with analytical estimates gleaned from a computer program written to output pertinent noise performance data for frequencies below the beta-cutoff frequency of a transistor.