Title :
Heavy-ion induced single-event transients in high-speed InP-InGaAs avalanche photodiodes
Author :
Laird, Jamie S. ; Hirao, Toshio ; Onoda, Shinobu ; Ohyama, Hidenori ; Kamiya, Tomihiro
Author_Institution :
Japan Atomic Energy Res. Inst., Gunma, Japan
Abstract :
Proton-induced heavy ions ion fluxes in InP/In0.53Ga0.47As avalanche photodiodes (APD) used in communication systems can induce single-event transients (SET) that degrade the bit error rate (BER) of optical links. For higher speed devices, increasing optical levels as a means of restoring the BER can lead to unwanted space-charge effects that reduce the APD bandwidth. To more fully comprehend charge collection mechanisms in APD structures, here we investigate the spatial and bias dependence of transient currents induced by focused 18-MeV O ions in a 2.5-GHz 50-μm-diameter InP/InGaAs APD designed for fiber communication from 1.3 μm to 1.5 μm.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; integrated optoelectronics; ion beam effects; optical links; radiation hardening (electronics); 1.3 to 1.5 mm; 18 MeV; 2.5 GHz; 50 micron; InP-In0.53Ga0.47As; InP-InGaAs; bit error rate; communication systems; heavy-ion induced single-event transients; high-speed InP-InGaAs avalanche photodiodes; optical levels; optical links; space-charge effects; Avalanche photodiodes; Bandwidth; Bit error rate; Degradation; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical devices; Optical fiber communication; Particle beam optics;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.821585
