Title :
Enhanced avalanche multiplication factor and single-event burnout
Author :
Kuboyama, Satoshi ; Ikeda, Naomi ; Hirao, Toshio ; Matsuda, Sumio
Author_Institution :
Nat. Space Dev. Agency of Japan, Ibaraki, Japan
Abstract :
We describe experimental data for single-event burnout of bipolar junction transistors and the results of analysis using device simulators. The analysis indicates that the enhanced impact ionization rate in the ion track plays an essential role to trigger the burnout.
Keywords :
avalanche breakdown; bipolar transistors; impact ionisation; power MOSFET; radiation hardening (electronics); bipolar junction transistors; device simulators; enhanced avalanche multiplication factor; single-event burnout; Analytical models; Electrodes; Helium; Impact ionization; MOSFET circuits; Numerical simulation; Photonic band gap; Power MOSFET; Spectroscopy; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.820730
