Title :
A new self-alignment technology using bridged base electrode for small-scaled AlGaAs/GaAs HBT´s
Author :
Nagata, Koichi ; Nakajima, Osaake ; Nittono, Takumi ; Yamauchi, Yoshiki ; Ishibashi, Tadao
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
fDate :
8/1/1992 12:00:00 AM
Abstract :
The fabrication and characterization of a new self-aligned HBT utilizing bridged base-electrode technology (BBT) are presented. This new technology simplifies the fabrication process and relaxes the limitations in device size scaling, thus decreasing the emitter size to 1 μm×1 μm. In spite of a large junction periphery area ratio, a good current gain of more than 10 is obtained in an HBT with an emitter size of 1 μm×1 μm. A series of fabricated HBTs shows excellent high-speed performance. The highest values of fT =90 GHz and fmax=63 GHz are obtained in an HBT with an emitter size of 1 μm×5 μm. The realization of HBTs with small emitters and excellent high-frequency characteristics demonstrates the effectiveness of this new technology
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; solid-state microwave devices; 1 micron; 63 GHz; 90 GHz; bridged base-electrode technology; current gain; device size scaling; emitter size; heterojunction bipolar transistor; high-frequency characteristics; self-aligned HBT; self-alignment technology; semiconductor; small scaled AlGaAs-GaAs transistor; Bipolar transistors; Capacitance; Delay; Electrodes; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Large scale integration; Power dissipation; Ring oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
