DocumentCode
879904
Title
Evaluating average and atypical response in radiation effects simulations
Author
Weller, Robert A. ; Sternberg, Andrew L. ; Massengill, Lloyd W. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume
50
Issue
6
fYear
2003
Firstpage
2265
Lastpage
2271
Abstract
We examine the limits of performing single-event simulations using pre-averaged radiation events. Geant4 simulations show the necessity, for future devices, to supplement current methods with ensemble averaging of device-level responses to physically realistic radiation events. Initial Monte Carlo simulations have generated a significant number of extremal events in local energy deposition. These simulations strongly suggest that proton strikes of sufficient energy, even those that initiate purely electronic interactions, can initiate device response capable in principle of producing single event upset or microdose damage in highly scaled devices.
Keywords
Monte Carlo methods; proton effects; radiation hardening (electronics); semiconductor device models; Geant4 simulations; Monte Carlo simulations; atypical response; average response; device-level responses; electronic interactions; extremal events; highly scaled devices; microdose damage; pre-averaged radiation events; radiation effects simulations; radiation events; single event upset; single-event simulations; Charge carrier processes; Current supplies; Discrete event simulation; Energy exchange; Integral equations; Protons; Radiation effects; Random variables; Single event upset; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2003.821576
Filename
1263870
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