Title :
Analog capacitance ROM with IGFET bucket-brigade shift register
Author :
Brunn, E. ; Olesen, Ole
Abstract :
A new type of monolithic analog read-out memory is described. It consists of a memory element and associated on-chip readout circuitry. The memory can be used for storing sample values of time-varying analog signals. The memory element is a matrix of MOS capacitors, preprogrammed in size by a special mask. The readout element is a bucket-brigade shift register with parallel input and serial output. A test circuit that permits investigation of different principles of information transfer from capacitance matrix to shift register has been developed.
Keywords :
Analogue storage; Charge-coupled devices; Field effect transistors; Monolithic integrated circuits; Read-only storage; Shift registers; analogue storage; charge-coupled devices; field effect transistors; monolithic integrated circuits; read-only storage; shift registers; Capacitance; Charge transfer; Circuit testing; Clocks; Delay lines; MOS capacitors; MOSFETs; Read only memory; Shift registers; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050554
