DocumentCode :
88001
Title :
Effect of Sputtering Parameters on the Morphology of TiO2 Nanotubes Synthesized From Thin Ti Film on Si Substrate
Author :
Chappanda, Karumbaiah N. ; Smith, York R. ; Rieth, Loren W. ; Tathireddy, Prashant ; Misra, Mano ; Mohanty, Subrata Kumar
Author_Institution :
Dept. of Electr. & Electron. Eng., Birla Inst. of Technol. & Sci., Pilani, India
Volume :
14
Issue :
1
fYear :
2015
fDate :
Jan. 2015
Firstpage :
18
Lastpage :
25
Abstract :
In this paper, we present the analysis of the properties of direct current (dc) magnetron sputtered Ti thin film that affect the morphology of TiO2 nanotubes synthesized by electrochemical anodization. Si wafer with thermally grown silicon dioxide was used as the substrate for deposition of Ti films. By varying the properties of the sputtered film, morphology of the anodized film can be varied from tubular to nanoporous TiO2. Three sputtering parameters that affect the properties of the film were studied, which include sputtering power, process gas (argon) pressure, and substrate temperature. Anodization of these films was carried out at 30 V (dc) using an ethylene glycol-based electrolyte. We show that the properties of thin film such as grain size and residual stress (bi-axial) do not affect the morphology of the anodized film and density alone influences the morphology of the anodized film. Most of the applications demonstrated by TiO2 nanotubes require annealing at high temperatures (350-800 °C) for calcination. Low residual stress in the thin film is required to prevent delaminating of the nanotubes from the substrate when exposed to high temperatures. We demonstrate that by varying the sputtering parameters, Ti films with low stress can be deposited which is required to have stable TiO2 nanotubes or nanoporous structure, based on the requirement of the application.
Keywords :
annealing; anodisation; calcination; density; electrolytes; grain size; nanotubes; silicon; silicon compounds; sputter deposition; surface morphology; titanium compounds; Si; TiO2; annealing; anodized film; calcination; density; direct current magnetron sputtering; electrochemical anodization; ethylene glycol based electrolyte; film morphology; grain size; nanoporous structure; nanotubes; process gas pressure; residual stress; sputtering parameters; sputtering power; substrate temperature; temperature 350 degC to 800 degC; thermally grown silicon dioxide; thin titanium film; Argon; Films; Morphology; Residual stresses; Silicon; Sputtering; Substrates; Nanoporous; Si substrate; TiO2; nano-porous; nanotubes; residual stress; thin film density; thin-film density;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2014.2360501
Filename :
6911947
Link To Document :
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