Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

Author

Shashkin, V.I. ; Vostokov, N.V.

Author_Institution

Inst. for Phys. of Microstructures, Nizhny Novgorod, Russia

Volume

1

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

76

Lastpage

82

Abstract

We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zero-bias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes.

Keywords

metal-semiconductor-metal structures; microwave detectors; terahertz wave detectors; Mott barrier diode; high-frequency path; low-frequency measuring circuit; metal-semiconductor-metal structure; noise equivalent power; sensing elements; sensing microwave-terahertz detector; symmetrical I-V characteristic; volt-watt sensitivity; zero-bias Schottky barrier diode; Detectors; Geometry; Microwave circuits; Resistance; Schottky diodes; Metal-semiconductor-metal structure; microwave-terahertz detector; schottky (Mott)-barrier transition;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2013.2252235

Filename

6477065