Title :
Effects of interface traps on the transconductance and drain current of InP MISFET´s
Author :
Chen, Chang-Lee ; Calawa, Arthur R. ; Courtney, William E. ; Mahoney, Leonard J. ; Palmateer, Susan C. ; Manfra, Michael J. ; Hollis, Mark A.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
The drain current, transconductance, and output resistance of an InP MISFET are shown to depend strongly on the frequency and amplitude of an AC signal applied to the gate. This dependence exists even though the familiar long-term current drift effect is negligible. To explain this phenomenon a new nonequilibrium interface-trap model is proposed
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; interface electron states; semiconductor device models; AC signal; InP transistor; MISFET; drain current; long-term current drift effect; nonequilibrium interface-trap model; output resistance; semiconductors; signal amplitude; signal frequency; transconductance; FETs; Gallium arsenide; Indium phosphide; Insulation; MISFETs; Molecular beam epitaxial growth; Radio frequency; Radiofrequency amplifiers; Thermal conductivity; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
