Title :
All-optical pressure sensor with temperature compensation on resonant PECVD silicon nitride microstructures
Author :
Unzeitig, H. ; Bartelt, Hartmut
Author_Institution :
Siemens AG Corp. Res., Erlangen, Germany
Abstract :
A novel sensor is presented incorporating easy separation of pressure and temperature sensitivity, both of which affect the frequency of a resonating bridge. With PECVD silicon nitride as bridge material, pressure sensitivities up to 86% per bar were achieved.
Keywords :
compensation; nonelectric sensing devices; plasma CVD coatings; pressure transducers; silicon compounds; PECVD; Si; Si 3N 4-Si; all-optical pressure sensor; bridge material; pressure sensitivities; resonating bridge; temperature compensation; temperature sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920251
