Title :
Transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures
Author :
Anagnostopoulos, C. ; Sadasiv, G.
fDate :
6/1/1975 12:00:00 AM
Abstract :
Polycrystalline silicon films are presently used as the semitransparent gate electrodes in front-illuminated charge-coupled device (CCD) and charge-injection device (CID) image sensors. The transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures is calculated in spectral region between 0.4 and 1.0 μ. A proper choice of the thicknesses of the oxide films can substantially increase the transmittance over a narrow wavelength band or over the entire wavelength region of interest.
Keywords :
Charge-coupled devices; Light transmission; charge-coupled devices; light transmission; Extinction coefficients; Image sensors; Optical films; Optical refraction; Optical sensors; Optical variables control; Refractive index; Semiconductor films; Silicon; Thin film sensors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050583
