DocumentCode
880267
Title
Transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures
Author
Anagnostopoulos, C. ; Sadasiv, G.
Volume
10
Issue
3
fYear
1975
fDate
6/1/1975 12:00:00 AM
Firstpage
177
Lastpage
179
Abstract
Polycrystalline silicon films are presently used as the semitransparent gate electrodes in front-illuminated charge-coupled device (CCD) and charge-injection device (CID) image sensors. The transmittance of air/SiO/SUB 2//polysilicon/SiO/SUB 2//Si structures is calculated in spectral region between 0.4 and 1.0 μ. A proper choice of the thicknesses of the oxide films can substantially increase the transmittance over a narrow wavelength band or over the entire wavelength region of interest.
Keywords
Charge-coupled devices; Light transmission; charge-coupled devices; light transmission; Extinction coefficients; Image sensors; Optical films; Optical refraction; Optical sensors; Optical variables control; Refractive index; Semiconductor films; Silicon; Thin film sensors;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050583
Filename
1050583
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