Title :
Bipolar high-speed low-power gates with double implanted transistors
Author :
Graul, Jürgen ; Kaiser, Hans ; Wilhelm, Wilhelm J. ; Ryssel, Heiner
fDate :
8/1/1975 12:00:00 AM
Abstract :
Speed power relations oxide isolated double implanted subnanosecond gate circuits (ECL and E/SUP 2/CL) were investigated in comparison to double diffused circuits. Under optimizing aspects with respect to propagation delay, data of double implanted integrated bipolar transistors and circuit performance are given dependent on implantation parameters.
Keywords :
Bipolar transistors; Current-mode logic; Digital integrated circuits; Logic gates; Monolithic integrated circuits; bipolar transistors; current-mode logic; digital integrated circuits; logic gates; monolithic integrated circuits; Boron; Circuits; Diffusion processes; Ion implantation; Isolation technology; Logic gates; Microwave transistors; Oxidation; Propagation delay; Reproducibility of results;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050594
