Title :
Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics
Author :
Keyes, Robert W.
fDate :
8/1/1975 12:00:00 AM
Abstract :
A model of the effect of random fluctuations in the number of impurity atoms in the depletion layer of a field-effect transistor (FET) is presented and analyzed. It is conducted that the range of space charge per unit area that must be anticipated on a chip containing N FET´s each of area A is ΔS=q(2 ln N)/SUP 1/2/A/SUP -1/4/n~/SUP 1/2/. n~ is the doping level of the substrate.
Keywords :
Field effect transistors; Monolithic integrated circuits; field effect transistors; monolithic integrated circuits; Atomic layer deposition; Doping; Electric breakdown; Electrodes; FETs; Fluctuations; Impurities; Space charge; Threshold voltage; Transistors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050600
