• DocumentCode
    88066
  • Title

    High Current Ripple for Power Density and Efficiency Improvement in Wide Bandgap Transistor-Based Buck Converters

  • Author

    Cougo, Bernardo ; Schneider, Henri ; Meynard, Thierry

  • Author_Institution
    LAAS Lab., Toulouse, France
  • Volume
    30
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    4489
  • Lastpage
    4504
  • Abstract
    With the recent development and availability of wide bandgap devices in the market, more and more power converters are being designed with such devices. Given their fast commutation, when compared to their equivalent Si-based counterparts, these new devices allow increasing the converter´s efficiency and/or power density. However, in order to fully avail these new devices, one should precisely know their switching characteristics and exploit it the best way possible. This paper recalls our own precise method to measure separately turn-on and turn-off energies of wide bandgap devices. This method is applied to commercially available SiC and GaN transistors and results show that they present much lower turn-off than turn-on energies. For that reason, we show that a SiC-based buck converter must have high current ripple in the output filter inductor in order to decrease transistor losses. Analysis of these losses as well as experimental results are presented. Finally, the precise design of a 2-kW SiC-based buck converter for aircraft applications is performed for different current ripples and switching frequencies. We show that current ripple higher than 250% of the dc load current significantly decreases the converter´s losses, and consequently allows the increase of the switching frequency, which reduces the system volume and weight.
  • Keywords
    III-V semiconductors; power transistors; switching convertors; wide band gap semiconductors; DC load current; GaN; SiC; aircraft application; filter inductor; gallium nitride; high current ripple; power 2 kW; power converter; power density; silicon carbide; switching frequency; transistor loss; wide bandgap device; wide bandgap transistor-based buck converter; Current measurement; Inductors; Loss measurement; Silicon carbide; Switches; Switching circuits; Transistors; Buck Converter; Buck converter; Converter Design; MOSFET; Silicon Carbide; Switching Losses; Zero Voltage Switching; converter design; silicon carbide MOSFET; switching losses; zero voltage switching;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2014.2360547
  • Filename
    6911953