Properties of ion-implanted high-power angled-grating distributed-feedback lasers

Author

Paschke, Katrin ; Bogatov, Alexander ; Bugge, Frank ; Drakin, Alexander E. ; Fricke, Jörg ; Güther, Reiner ; Stratonnikov, Alexey A. ; Wenzel, Hans ; Erbert, Götz ; Tränkle, Günther

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

Volume

9

Issue

5

fYear

2003

Firstpage

1172

Lastpage

1178

Abstract

An improvement of the linearity of the light-current characteristics and the beam quality of high-power α-distributed feedback lasers is achieved by an ion implantation of the regions outside the contact stripe. The linear part of the light-current characteristics of 4-mm-long devices emitting at 1060 nm is extended to P=1.8 W output power. The times-diffraction-limit factor M² remains constant, equal to 1.7 over the whole power range. Simulations of the electro-optical behavior reveal that the improvement is achieved by a suppression of optical field components which propagate inside the cavity perpendicular to the facets.

Keywords

Bragg gratings; distributed feedback lasers; electro-optical effects; ion implantation; laser beams; laser cavity resonators; laser theory; quantum well lasers; semiconductor device models; α-distributed feedback lasers; 1.8 W; 1060 nm; 4 mm; angled-grating distributed-feedback lasers; beam quality; cavity propagation; contact stripe; electro-optical behavior; high-power distributed-feedback lasers; ion implantation; ion-implanted distributed-feedback lasers; light-current characteristics; optical field component suppression; slanted Bragg grating; times-diffraction-limit factor; Distributed feedback devices; Ion implantation; Laser beams; Laser feedback; Linearity; Optical devices; Optical feedback; Optical propagation; Power generation; Stimulated emission;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2003.820915

Filename

1263947