DocumentCode :
880789
Title :
All-MOS charge-redistribution analog-to-digital conversion techniques. II
Author :
Suárez, Ricardo E. ; Gray, Paul R. ; Hodges, David A.
Volume :
10
Issue :
6
fYear :
1975
Firstpage :
379
Lastpage :
385
Abstract :
For pt.I see ibid., vol.SC-10, no.6, p.371-9 (1975). Describes techniques for performing A/D conversion compatibly with standard single-channel MOS technology. This second paper describes a two-capacitor successive approximation technique which, in contrast to the first, requires considerably less die area, is inherently monotonic in the presence of capacitor ratio errors, and which operates at somewhat lower conversion rate. Factors affecting accuracy and conversion rate are considered analytically. Experimental results from a monolithic prototype are presented; a resolution of eight bits was achieved with an A/D conversion time of 100 /spl mu/s. Used as a D/A convertor, a settling time of 12.5 /spl mu/s was achieved. The estimated total die size for a completely monolithic version including logic is 5000 mil/SUP 2/.
Keywords :
Analogue-digital conversion; Convertors; Field effect transistors; Large scale integration; Monolithic integrated circuits; analogue-digital conversion; convertors; field effect transistors; large scale integration; monolithic integrated circuits; Analog-digital conversion; Charge transfer; Electrical engineering; Integrated circuit technology; Laboratories; MOS capacitors; MOS integrated circuits; MOSFETs; Phase change materials; Propulsion;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1975.1050630
Filename :
1050630
Link To Document :
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