DocumentCode
880789
Title
All-MOS charge-redistribution analog-to-digital conversion techniques. II
Author
Suárez, Ricardo E. ; Gray, Paul R. ; Hodges, David A.
Volume
10
Issue
6
fYear
1975
Firstpage
379
Lastpage
385
Abstract
For pt.I see ibid., vol.SC-10, no.6, p.371-9 (1975). Describes techniques for performing A/D conversion compatibly with standard single-channel MOS technology. This second paper describes a two-capacitor successive approximation technique which, in contrast to the first, requires considerably less die area, is inherently monotonic in the presence of capacitor ratio errors, and which operates at somewhat lower conversion rate. Factors affecting accuracy and conversion rate are considered analytically. Experimental results from a monolithic prototype are presented; a resolution of eight bits was achieved with an A/D conversion time of 100 /spl mu/s. Used as a D/A convertor, a settling time of 12.5 /spl mu/s was achieved. The estimated total die size for a completely monolithic version including logic is 5000 mil/SUP 2/.
Keywords
Analogue-digital conversion; Convertors; Field effect transistors; Large scale integration; Monolithic integrated circuits; analogue-digital conversion; convertors; field effect transistors; large scale integration; monolithic integrated circuits; Analog-digital conversion; Charge transfer; Electrical engineering; Integrated circuit technology; Laboratories; MOS capacitors; MOS integrated circuits; MOSFETs; Phase change materials; Propulsion;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050630
Filename
1050630
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