• DocumentCode
    88089
  • Title

    In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

  • Author

    Nguyen, Ha Q. ; Trinh, H.D. ; Chang, Edward Yi ; Lee, C.T. ; Shin Yuan Wang ; Yu, H.W. ; Hsu, C.H. ; Nguyen, C.L.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    235
  • Lastpage
    240
  • Abstract
    We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106 cm-2. The performance of the MOSCAPs is comparable to that of In0.53Ga0.47As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2 × 1012 eV-1 · cm-2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown.
  • Keywords
    Fermi level; III-V semiconductors; MOCVD; MOS capacitors; gallium arsenide; indium compounds; interface states; molecular beam epitaxial growth; Fermi level; GaAs; GaAs substrate; In0.5Ga0.5As; MOSCAP; capacitance-voltage response; conductance method; electron volt energy 0.64 eV to 0.52 eV; frequency dispersion; interface trap density; metal-organic chemical vapor deposition; metal-oxide-semiconductor capacitor; molecular beam epitaxy technique; parallel conductance; threading dislocation density; Aluminum oxide; Gallium arsenide; Indium gallium arsenide; Indium phosphide; MOCVD; Silicon; Substrates; $hbox{Al}_{2}hbox{O}_{3}$; InGaAs; metal–organic chemical vapor deposition (MOCVD); metal–oxide–semiconductor (MOS) capacitor (MOSCAP);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2228201
  • Filename
    6376156