• DocumentCode
    880902
  • Title

    Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS Capacitors

  • Author

    Suzuki, Kazumichi ; Sakagami, Masaharu ; Nishimura, Eiichi ; Watanabe, Kikuo

  • Author_Institution
    Energy Research Laboratory, Hitachi Ltd. Hitachi, Ibaraki 316, Japan
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    3911
  • Lastpage
    3915
  • Abstract
    The radiation-induced positive charges trapped in an n-type MDS capacitor were observed to decrease with the number of C-V measurements. The positive gate bias applied on the capacitor was found to cause the decrease in the trapped charges. Its proposed mechanism was a recombination of the trapped positive charges with electrons injected from the Si substrate into the SiO2 layer due to the bias.
  • Keywords
    Annealing; Capacitance-voltage characteristics; Current measurement; Electron traps; Ferroelectric films; Laboratories; MOS capacitors; Nonvolatile memory; Random access memory; State estimation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334042
  • Filename
    4334042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880902