• DocumentCode
    880912
  • Title

    Hole Removal in Thin-Gate MOSFETs by Tunneling

  • Author

    Benedetto, J.M. ; Boesch, H.E., Jr. ; McLean, F.B. ; Mize, J.P.

  • Author_Institution
    US Army Electronics Research and Development Command Harry Diamond Laboratories Adelphi, Maryland 20783-1197
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    3916
  • Lastpage
    3920
  • Abstract
    Fast time-resolved measurements of the response of thin-oxide MOSFETs show that radiation-induced holes are removed from the gate oxide by a tunneling process. A tunneling rate of 0.35 nm/decade from each interface is found for SiO2 at 77 K. Fast time-resolved measurements performed at room temperature are in qualitative agreement with low-temperature annealing data. Uncertainties in the room-temperature data did not allow extraction of firm and reliable values for the tunneling parameters.
  • Keywords
    Electrons; FETs; Laboratories; MOSFETs; Performance evaluation; Research and development; Temperature measurement; Testing; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334043
  • Filename
    4334043
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=880912