Title :
A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device
Author :
Young, Paul G. ; Romanofsky, Robert R. ; Alterovitz, Samuel A. ; Mena, Rafael A. ; Smith, Edwyn D.
Author_Institution :
Dept. of Electr. Eng., Toledo Univ., OH, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10-GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microstrip components; microwave amplifiers; microwave integrated circuits; -14 dB; 10 GHz; 6.8 dB; Al/sub 2/O/sub 3/; MIC; SHF; alumina substrate; epitaxial lift-off; microstrip circuits; photolithographically patterned metal; pseudomorphic HEMT device; Degradation; Etching; Gallium arsenide; HEMTs; Integrated circuit interconnections; MESFETs; Microwave devices; NASA; PHEMTs; Substrates;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
