Title :
Radiation Hardened Silicon Devices Using a Novel Thick Oxide
Author :
Watanabe, Kikuo ; Kato, Masataka ; Okabe, Takahiro ; Nagata, Minoru
Author_Institution :
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
Abstract :
A radiation hardened thick oxide technology is proposed. It utilizes a double layer consisting of a thick chemically deposited SiO2 over a thin thermal SiO2. In npn transistors, a 1.5 order of magnitude improvement in radiation tolerance is observed when this technology is combined with a highly doped Si surface layer.
Keywords :
Bipolar transistors; Chemicals; Dielectric thin films; Electrodes; MOS capacitors; Radiation hardening; Semiconductor films; Silicon devices; Substrates; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334052
