Title :
Impact of intraband relaxation on the performance of a quantum-dot laser
Author :
Markus, Alexander ; Chen, Jianxin X. ; Gauthier-Lafaye, Olivier ; Provost, Jean-Guy ; Paranthoen, C. ; Fiore, Andrea
Author_Institution :
Ecole Polytechnique Fed. de Lausanne, Inst. of Quantum Electron. & Photonics, Lausanne, Switzerland
Abstract :
Measurements on 1.3-μm quantum-dot lasers are presented that reveal a number of interesting effects. 1) At high bias, a second lasing line appears, corresponding to the excited state transition. 2) The linewidth enhancement factor increases dramatically above threshold. 3) The modulation performance is degraded when the second lasing line appears. A comprehensive numerical model is developed to explain this behavior. We attribute it to incomplete gain clamping above threshold. This is caused by a combination of the finite intraband relaxation time and the limited density of states.
Keywords :
carrier relaxation time; electroluminescence; electronic density of states; excited states; infrared spectra; laser theory; optical modulation; quantum dot lasers; semiconductor quantum dots; 1.3 mum; comprehensive numerical model; density of states; excited state transition; finite intraband relaxation time; incomplete gain clamping; intraband relaxation; lasing line; linewidth enhancement factor; modulation performance; quantum dot laser performance; Clamps; Degradation; Equations; Laser excitation; Laser modes; Numerical models; Photonics; Quantum dot lasers; Semiconductor lasers; Spontaneous emission;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2003.819494
