DocumentCode :
881066
Title :
Rapid Annealing of Temperature-Compensated, Precision Voltage References Following Fast Neutron Irradiation
Author :
Fischer, T.A. ; Williams, R.J.
Author_Institution :
Sandia National Laboratories P. O. Box 5800 Albuquerque, NM 87185
Volume :
32
Issue :
6
fYear :
1985
Firstpage :
4005
Lastpage :
4009
Abstract :
Substantial, short-term voltage variations have been observed during the rapid annealing of twin-junction, temperature-compensated, precision voltage references (TC PVRs) immediately following exposure to fast-neutron bursts of up to 4 × 1014 n/cm2. The short term recovery has been found to be dominated by minority carrier lifetime reduction in the forward biased junction of this composite junction device. The annealing response has been measured and found to be roughly independent of neutron fluence in the range from 1 - 4 × 1014 n/cm2.
Keywords :
Annealing; Charge carrier lifetime; Circuits; Diodes; Forward contracts; Laboratories; Neutrons; Niobium; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334059
Filename :
4334059
Link To Document :
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