• DocumentCode
    881066
  • Title

    Rapid Annealing of Temperature-Compensated, Precision Voltage References Following Fast Neutron Irradiation

  • Author

    Fischer, T.A. ; Williams, R.J.

  • Author_Institution
    Sandia National Laboratories P. O. Box 5800 Albuquerque, NM 87185
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4005
  • Lastpage
    4009
  • Abstract
    Substantial, short-term voltage variations have been observed during the rapid annealing of twin-junction, temperature-compensated, precision voltage references (TC PVRs) immediately following exposure to fast-neutron bursts of up to 4 × 1014 n/cm2. The short term recovery has been found to be dominated by minority carrier lifetime reduction in the forward biased junction of this composite junction device. The annealing response has been measured and found to be roughly independent of neutron fluence in the range from 1 - 4 × 1014 n/cm2.
  • Keywords
    Annealing; Charge carrier lifetime; Circuits; Diodes; Forward contracts; Laboratories; Neutrons; Niobium; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334059
  • Filename
    4334059