DocumentCode
881066
Title
Rapid Annealing of Temperature-Compensated, Precision Voltage References Following Fast Neutron Irradiation
Author
Fischer, T.A. ; Williams, R.J.
Author_Institution
Sandia National Laboratories P. O. Box 5800 Albuquerque, NM 87185
Volume
32
Issue
6
fYear
1985
Firstpage
4005
Lastpage
4009
Abstract
Substantial, short-term voltage variations have been observed during the rapid annealing of twin-junction, temperature-compensated, precision voltage references (TC PVRs) immediately following exposure to fast-neutron bursts of up to 4 Ã 1014 n/cm2. The short term recovery has been found to be dominated by minority carrier lifetime reduction in the forward biased junction of this composite junction device. The annealing response has been measured and found to be roughly independent of neutron fluence in the range from 1 - 4 Ã 1014 n/cm2.
Keywords
Annealing; Charge carrier lifetime; Circuits; Diodes; Forward contracts; Laboratories; Neutrons; Niobium; Temperature; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1985.4334059
Filename
4334059
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