DocumentCode :
88110
Title :
A 0.8-V 230- \\mu W 98-dB DR Inverter-Based \\Sigma \\Delta Modulator for Audio Applications
Author :
Hao Luo ; Yan Han ; Cheung, Ray C. C. ; Xiaopeng Liu ; Tianlin Cao
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Volume :
48
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
2430
Lastpage :
2441
Abstract :
This paper presents a ΣΔ modulator based on a gain-boost class-C inverter for audio applications. The gain-boost class-C inverter behaves as a low-voltage subthreshold amplifier and boosts its dc gain for the high-precision requirement. Meanwhile, an on-chip body bias is used to compensate the performance degradation of the inverter at a slow process corner or low supply voltage. The proposed inverter-based modulator is fabricated in a 65-nm mixed-signal CMOS process with a die area of 0.3 mm 2. The experimental chip achieves 91-dB peak signal-to-noise-plus-distortion ratio (SNDR), 94-dB signal-to-noise ratio (SNR) and 98-dB dynamic range (DR) over a 20-KHz audio band with a 5-MHz sampling frequency and a 0.8-V supply voltage consuming only 230-μW power, which demonstrates that the gain-boost class-C inverter is particularly suitable for low-voltage micro-power high-resolution applications.
Keywords :
CMOS integrated circuits; audio-frequency amplifiers; logic gates; low-power electronics; mixed analogue-digital integrated circuits; sigma-delta modulation; SNDR; SNR; frequency 20 kHz; frequency 5 MHz; gain boost; low-voltage subthreshold amplifier; mixed-signal CMOS process; on-chip body bias; power 230 muW; signal-to-noise ratio; signal-to-noise-plus-distortion ratio; size 65 nm; voltage 0.8 V; Bandwidth; Gain; Inverters; Modulation; Noise; Threshold voltage; Transistors; $Sigma Delta$ modulator; Class-C inverter; gain boost; on-chip body bias;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2275659
Filename :
6582680
Link To Document :
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