Title :
Low-noise integrated silicon-gate FET amplifier
Author :
Boornard, A. ; Herrmann, E. ; Hsu, S.T.
Abstract :
A high-gain silicon-gate FET amplifier having low noise is described, and results of gain and noise measurements are presented. To obtain low flicker and thermal noise, the input FET was designed as a large-area device (0.336 mm/SUP 2/) with large channel width-to-length ratio (130:1).
Keywords :
Amplifiers; Field effect transistors; Linear integrated circuits; Monolithic integrated circuits; Thermal noise; amplifiers; field effect transistors; linear integrated circuits; monolithic integrated circuits; thermal noise; 1f noise; Capacitors; Circuits; FETs; Inductance; Low-noise amplifiers; Resistors; Semiconductor device noise; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1975.1050658
