• DocumentCode
    881103
  • Title

    Analysis of Transient Radiation Upset in a 2K SRAM

  • Author

    Massengill, L.W. ; Diehl-Nagle, S.E. ; Wrobel, T.F.

  • Author_Institution
    North Carolina State University Raleigh, NC 27695-7911
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4026
  • Lastpage
    4030
  • Abstract
    Experimental characterization of the effects of power supply interconnect resistance on the transient radiation induced upset level of a 2K SRAM and correlations with rail span collapse simulations are presented. The results show that the dose-rate upset threshold increases if columns of RAM cells are isolated from the Vss supply grid. The magnitude of this increase is predicted well by computer simulations.
  • Keywords
    Circuit simulation; Computational modeling; Integrated circuit interconnections; Photoconductivity; Power supplies; Rails; Random access memory; Read-write memory; Transient analysis; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334062
  • Filename
    4334062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881103