DocumentCode
881121
Title
Hardening of Commercial CMOS PROMS with Polysilicon Fusible Links
Author
Newman, Warren Harding ; Rauchfuss, James Edward
Author_Institution
Harris Semiconductor P. O. Box 883 Melbourne, FL 32901
Volume
32
Issue
6
fYear
1985
Firstpage
4036
Lastpage
4039
Abstract
The method by which a commercial 4K CMOS PROM with polysilicon fuses was hardened and the feasibility of applying this method to a 16K PROM are presented. A description of the process and the necessary minor modifications to the original layout are given. The PROM circuit and discrete device characteristics over radiation to 1000K rad-Si are summarized. The dose rate sensitivity of the 4K PROMs is also presented.
Keywords
CMOS process; Circuit testing; Etching; Fuses; Latches; PROM; Performance evaluation; Radiation hardening; Random access memory; Read only memory;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1985.4334064
Filename
4334064
Link To Document