Title :
Hardening of Commercial CMOS PROMS with Polysilicon Fusible Links
Author :
Newman, Warren Harding ; Rauchfuss, James Edward
Author_Institution :
Harris Semiconductor P. O. Box 883 Melbourne, FL 32901
Abstract :
The method by which a commercial 4K CMOS PROM with polysilicon fuses was hardened and the feasibility of applying this method to a 16K PROM are presented. A description of the process and the necessary minor modifications to the original layout are given. The PROM circuit and discrete device characteristics over radiation to 1000K rad-Si are summarized. The dose rate sensitivity of the 4K PROMs is also presented.
Keywords :
CMOS process; Circuit testing; Etching; Fuses; Latches; PROM; Performance evaluation; Radiation hardening; Random access memory; Read only memory;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334064
