Title :
Power generation in GaAs at frequencies far in excess of the intrinsic Gunn frequency
Author :
Kennedy, W.K., Jr.
Author_Institution :
Cornell University, Ithaca, N.Y.
fDate :
4/1/1966 12:00:00 AM
Keywords :
Diodes; Frequency; Gallium arsenide; Gunn devices; Injection-locked oscillators; Iris; Microwave oscillators; Power generation; Tunable circuits and devices; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1966.4828
