• DocumentCode
    881161
  • Title

    Nuclear Radiation Response of Intel 64k-Bit and 128k-Bit HMOS Ultraviolet Erasable Programmable Read Only Memories (UVEPROMs)

  • Author

    Rensner, Gary D. ; Eckhardt, David A. ; Page, Michael

  • Author_Institution
    Booz.Allen & Hamilton Inc. 2309 Renard P1. SE Suite 301 Albuquerque, NM 87106
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4056
  • Lastpage
    4060
  • Abstract
    The design of hardware for military systems often includes requirements to withstand strategic or tactical nuclear environments. Hardening analyses are partly based on facts obtained from nuclear radiation tests on circuit devices. This paper presents the results of experiments conducted to investigate the functional responses of Intel 2764 and 27128 ultraviolet erasable programmable read only memories (UVEPROMs) after exposure to neutron fluence and gamma dose rate environments. Each device was evaluated for permanent device damage and for memory bit failure. An estimate of the total radiation dose was also obtained using the test data.
  • Keywords
    Application software; Circuit testing; EPROM; Electrons; Gamma rays; Hardware; Ionizing radiation; Neutrons; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334068
  • Filename
    4334068