Title :
Radiation Hardness of 256-Bit GaAs C-JFET Ram
Author_Institution :
McDonnell Douglas Microelectronics Center Huntington Beach, CA 92647
Abstract :
A low-power complementary RAM using GaAs enhancement N- and P-channel junction field effect transistors has been developed at MDMC. The power dissipation per memory cell is 1 ¿W. The RAM´s logic upset level for pulsed ionizing radiation is in the range of 1010 to 3 × 1011 rad(GaAs)/s. A total gamma dose of 1.5 × 108 rad(GaAs) does not affect the RAM operation. Previous tests were performed with RAMs using four N-channel JFETs and resistive loads in the memory cell.
Keywords :
FETs; Gallium arsenide; Ionizing radiation; JFETs; Logic; Performance evaluation; Power dissipation; Random access memory; Read-write memory; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334069
