• DocumentCode
    881172
  • Title

    Radiation Hardness of 256-Bit GaAs C-JFET Ram

  • Author

    Notthoff, J.K.

  • Author_Institution
    McDonnell Douglas Microelectronics Center Huntington Beach, CA 92647
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4061
  • Lastpage
    4064
  • Abstract
    A low-power complementary RAM using GaAs enhancement N- and P-channel junction field effect transistors has been developed at MDMC. The power dissipation per memory cell is 1 ¿W. The RAM´s logic upset level for pulsed ionizing radiation is in the range of 1010 to 3 × 1011 rad(GaAs)/s. A total gamma dose of 1.5 × 108 rad(GaAs) does not affect the RAM operation. Previous tests were performed with RAMs using four N-channel JFETs and resistive loads in the memory cell.
  • Keywords
    FETs; Gallium arsenide; Ionizing radiation; JFETs; Logic; Performance evaluation; Power dissipation; Random access memory; Read-write memory; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334069
  • Filename
    4334069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881172