• DocumentCode
    881225
  • Title

    Design of a 16384-bit serial charge-coupled memory device

  • Author

    Chou, Sunlin

  • Volume
    11
  • Issue
    1
  • fYear
    1976
  • fDate
    2/1/1976 12:00:00 AM
  • Firstpage
    10
  • Lastpage
    18
  • Abstract
    This paper describes a 16384-bit serial charge-coupled memory device designed primarily for low cost and compatibility with existing high-volume manufacturing techniques. To obtain low access time, the device was organized as 64 recirculating shift registers each 256 bits long. Any one register can be selected at random for reading or writing, by means of a 6-bit address input. The alternatives considered in choosing the charge-coupled device (CCD) structure and chip organization are discussed. Data regeneration circuits are described in detail. The device was fabricated on a silicon chip, with an area of 2.07 mil/SUP 2//bit (including all peripheral circuitry). It operates at data rates exceeding 2 MHz, and has a minimum average access time of under 100 μs.
  • Keywords
    Charge-coupled devices; Digital integrated circuits; Monolithic integrated circuits; Semiconductor storage devices; charge-coupled devices; digital integrated circuits; monolithic integrated circuits; semiconductor storage devices; Charge coupled devices; Costs; Decoding; Electron devices; Fabrication; Logic design; MOSFET circuits; Manufacturing; Production; Semiconductor memory;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1976.1050669
  • Filename
    1050669