DocumentCode
881225
Title
Design of a 16384-bit serial charge-coupled memory device
Author
Chou, Sunlin
Volume
11
Issue
1
fYear
1976
fDate
2/1/1976 12:00:00 AM
Firstpage
10
Lastpage
18
Abstract
This paper describes a 16384-bit serial charge-coupled memory device designed primarily for low cost and compatibility with existing high-volume manufacturing techniques. To obtain low access time, the device was organized as 64 recirculating shift registers each 256 bits long. Any one register can be selected at random for reading or writing, by means of a 6-bit address input. The alternatives considered in choosing the charge-coupled device (CCD) structure and chip organization are discussed. Data regeneration circuits are described in detail. The device was fabricated on a silicon chip, with an area of 2.07 mil/SUP 2//bit (including all peripheral circuitry). It operates at data rates exceeding 2 MHz, and has a minimum average access time of under 100 μs.
Keywords
Charge-coupled devices; Digital integrated circuits; Monolithic integrated circuits; Semiconductor storage devices; charge-coupled devices; digital integrated circuits; monolithic integrated circuits; semiconductor storage devices; Charge coupled devices; Costs; Decoding; Electron devices; Fabrication; Logic design; MOSFET circuits; Manufacturing; Production; Semiconductor memory;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050669
Filename
1050669
Link To Document