• DocumentCode
    881227
  • Title

    Frequency modulation locking in 980 nm strained quantum well lasers

  • Author

    Chinn, S.R. ; Wang, Christine A. ; Evans, G.A.

  • Author_Institution
    MIT, Lexington, MA, USA
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    646
  • Lastpage
    648
  • Abstract
    The fundamental and second-harmonic spectral characteristics of frequency modulation locking have been observed in strained-layer InGaAs quantum well Fabry-Perot ridge-waveguide lasers emitting at 980 nm.
  • Keywords
    III-V semiconductors; frequency modulation; gallium arsenide; indium compounds; laser mode locking; optical harmonic generation; semiconductor lasers; 980 nm; Fabry-Perot ridge-waveguide lasers; InGaAs; frequency modulation locking; second-harmonic spectral characteristics; strained quantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930433
  • Filename
    209925