Title :
Frequency modulation locking in 980 nm strained quantum well lasers
Author :
Chinn, S.R. ; Wang, Christine A. ; Evans, G.A.
Author_Institution :
MIT, Lexington, MA, USA
fDate :
4/15/1993 12:00:00 AM
Abstract :
The fundamental and second-harmonic spectral characteristics of frequency modulation locking have been observed in strained-layer InGaAs quantum well Fabry-Perot ridge-waveguide lasers emitting at 980 nm.
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; indium compounds; laser mode locking; optical harmonic generation; semiconductor lasers; 980 nm; Fabry-Perot ridge-waveguide lasers; InGaAs; frequency modulation locking; second-harmonic spectral characteristics; strained quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930433
