DocumentCode
881227
Title
Frequency modulation locking in 980 nm strained quantum well lasers
Author
Chinn, S.R. ; Wang, Christine A. ; Evans, G.A.
Author_Institution
MIT, Lexington, MA, USA
Volume
29
Issue
8
fYear
1993
fDate
4/15/1993 12:00:00 AM
Firstpage
646
Lastpage
648
Abstract
The fundamental and second-harmonic spectral characteristics of frequency modulation locking have been observed in strained-layer InGaAs quantum well Fabry-Perot ridge-waveguide lasers emitting at 980 nm.
Keywords
III-V semiconductors; frequency modulation; gallium arsenide; indium compounds; laser mode locking; optical harmonic generation; semiconductor lasers; 980 nm; Fabry-Perot ridge-waveguide lasers; InGaAs; frequency modulation locking; second-harmonic spectral characteristics; strained quantum well lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930433
Filename
209925
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