Title :
60 GHz reflection gain based on superlattice negative differential conductance
Author :
Hadjazi, M. ; Palmier, J.F. ; Sibille, Alain ; Wang, Huifang ; Paris, E. ; Mollot, F.
Author_Institution :
France Telecom/CNET, Bagneux, France
fDate :
4/15/1993 12:00:00 AM
Abstract :
The negative differential conductance originating from miniband negative effective mass has been characterised at high frequencies in two GaAs/AlAs superlattice devices. High reflection gains reaching 10 dB at 38 GHz have been observed up to 60 GHz. These results demonstrate the excellent potentialities of superlattices for millimetre-wave oscillator applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; microwave generation; negative resistance; semiconductor superlattices; solid-state microwave devices; 0 to 60 GHz; 10 dB; GaAs-AlAs superlattice devices; Smith chart; millimetre-wave oscillator; miniband negative effective mass; negative differential conductance; reflection gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930434
