مرکز منطقه ای اطلاع رساني علوم و فناوري - Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers

DocumentCode :

881257

Title :

Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers

Author :

Bosacchi, A. ; Franchi, S. ; Gombia, E. ; Mosca, R. ; Fantini, F. ; Menozzi, R.

Author_Institution :

MASPEC Inst., CNR, Parma, Italy

Volume :

Issue :

fYear :

1993

fDate :

4/15/1993 12:00:00 AM

Firstpage :

651

Lastpage :

653

Abstract :

Outstanding stability has been observed in Al/Al_xGa_1-xAs and Al/GaAs/Al_xGa_1-xAs (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.

Keywords :

III-V semiconductors; Schottky effect; aluminium; aluminium compounds; annealing; gallium arsenide; metallic epitaxial layers; molecular beam epitaxial growth; semiconductor-metal boundaries; 400 degC; Al-Al_0.25Ga_0.75As; Al-GaAs-Al_0.25Ga_0.75As; MBE; Schottky barriers; annealing; barrier height; ideality factor; in situ deposition; thermal stability;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:19930436

Filename :

209928

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=881257