• DocumentCode
    881257
  • Title

    Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers

  • Author

    Bosacchi, A. ; Franchi, S. ; Gombia, E. ; Mosca, R. ; Fantini, F. ; Menozzi, R.

  • Author_Institution
    MASPEC Inst., CNR, Parma, Italy
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    651
  • Lastpage
    653
  • Abstract
    Outstanding stability has been observed in Al/AlxGa1-xAs and Al/GaAs/AlxGa1-xAs (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones. The changes in barrier height and ideality factor induced by annealing are reported.
  • Keywords
    III-V semiconductors; Schottky effect; aluminium; aluminium compounds; annealing; gallium arsenide; metallic epitaxial layers; molecular beam epitaxial growth; semiconductor-metal boundaries; 400 degC; Al-Al 0.25Ga 0.75As; Al-GaAs-Al 0.25Ga 0.75As; MBE; Schottky barriers; annealing; barrier height; ideality factor; in situ deposition; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930436
  • Filename
    209928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881257