DocumentCode
881287
Title
Simulation Approach for Modeling Single Event Upsets on Advanced CMOS SRAMS
Author
Johnson, Richard L., Jr. ; Diehl-Nagle, Sherra E. ; Hauser, John R.
Author_Institution
North Carolina State University Department of Electrical and Computer Engineering Box 7911 Raleigh, NC 27695-7911
Volume
32
Issue
6
fYear
1985
Firstpage
4122
Lastpage
4127
Abstract
A pair of simulation routines have been developed in order to accurately model single event upsets in advanced CMOS SRAMs. Simulation problems addressed are those associated with modelling minority carrier charge storage and multilayer charge collection effects. As a result, the decoupling resistance to harden the cell for an advanced CMOS structure has been accurately estimated and a simulation technique for modelling the "ion shunt" effect has been developed. This work describes a simulation method for routine evaluation of single event effects on circuit response.
Keywords
CMOS logic circuits; CMOS memory circuits; Capacitance; Circuit simulation; Computational modeling; Discrete event simulation; Random access memory; SPICE; Semiconductor device modeling; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1985.4334079
Filename
4334079
Link To Document