• DocumentCode
    881298
  • Title

    Multiplication noise in GaAs/AlGaAs multiquantum well avalanche photodiodes with different well widths

  • Author

    Salokatve, A. ; Toivonen, Mikko ; Hovinen, M.

  • Author_Institution
    Tampere Univ. of Technol., Finland
  • Volume
    28
  • Issue
    4
  • fYear
    1992
  • Firstpage
    416
  • Lastpage
    417
  • Abstract
    The dependence of multiplication excess noise of GaAs/Al0.36Ga0.64As multiquantum well avalanche photodiodes on GaAs well width was studied through noise measurements. Three samples with approximately 480 AA barriers and wells of 134, 278, and 445 AA in thickness were grown by molecular beam epitaxy. An effective ratio of hole and electron ionisation rates of 0.4 was measured for all the samples, indicating that it cannot be affected by varying the well width in the range of layer thicknesses studied.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; electron device noise; gallium arsenide; molecular beam epitaxial growth; semiconductor quantum wells; 134 to 480 AA; APD; GaAs well width; GaAs-Al 0.36Ga 0.64As; MQW; avalanche photodiodes; electron ionisation rates; hole ionisation rate; layer thicknesses; molecular beam epitaxy; multiplication excess noise; multiquantum well; noise measurements; well width variation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920261
  • Filename
    126400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881298