Title :
Multiplication noise in GaAs/AlGaAs multiquantum well avalanche photodiodes with different well widths
Author :
Salokatve, A. ; Toivonen, Mikko ; Hovinen, M.
Author_Institution :
Tampere Univ. of Technol., Finland
Abstract :
The dependence of multiplication excess noise of GaAs/Al0.36Ga0.64As multiquantum well avalanche photodiodes on GaAs well width was studied through noise measurements. Three samples with approximately 480 AA barriers and wells of 134, 278, and 445 AA in thickness were grown by molecular beam epitaxy. An effective ratio of hole and electron ionisation rates of 0.4 was measured for all the samples, indicating that it cannot be affected by varying the well width in the range of layer thicknesses studied.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; electron device noise; gallium arsenide; molecular beam epitaxial growth; semiconductor quantum wells; 134 to 480 AA; APD; GaAs well width; GaAs-Al 0.36Ga 0.64As; MQW; avalanche photodiodes; electron ionisation rates; hole ionisation rate; layer thicknesses; molecular beam epitaxy; multiplication excess noise; multiquantum well; noise measurements; well width variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920261
