High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

Author

Song, Jong-In ; Palmstrom, C.J. ; Hong, Woo-Pyo ; Hayes, J.R.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

29

Issue

8

fYear

1993

fDate

4/15/1993 12:00:00 AM

Firstpage

666

Lastpage

667

Abstract

InP/In_0.53Ga_0.47As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7*10¹⁹/cm³. To the authors´ knowledge, this is the highest doping level reported using carbon. HBTs with a 20 AA spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BV_CEO were 7 and 6 V, respectively.

Keywords

III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; 6 V; Gummel plot; HBTs; InP-In_0.53Ga_0.47As:C; base current ideality factor; breakdown voltage; chemical beam epitaxy; collector current ideality factor; current gain; doping level; heterojunction bipolar transistors; highly doped base; hole concentration; ideal I-V characteristics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930446

Filename

209938