DocumentCode :
881363
Title :
Effects of electron irradiation of metal-nitride-semiconductor insulated gate field-effect transistors
Author :
Wegener, H.A.R.
Volume :
54
Issue :
5
fYear :
1966
fDate :
5/1/1966 12:00:00 AM
Firstpage :
784
Lastpage :
785
Keywords :
Charge carrier processes; Electron traps; FETs; Insulation; Leakage current; MOS devices; MOSFETs; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.4848
Filename :
1446778
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=881363
