• DocumentCode
    881395
  • Title

    Heavy Ion Induced Permanent Damage in MNOS Gate Insulators

  • Author

    Pickel, James C. ; Blandford, James T., Jr. ; Waskiewicz, A.E. ; Strahan, V.H., Jr.

  • Author_Institution
    IRT Corporation Placentia, CA
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • Firstpage
    4176
  • Lastpage
    4179
  • Abstract
    Heavy-ion-induced permanent damage in MNOS gate insulators has been investigated using a Cf252 fission source. The electric field and ion LET thresholds for onset of the damage has been characterized. The results are consistent with a thermal runaway mechanism in the silicon nitride layer initiated by a single heavy ion and leading to a permanent high conductivity path through the dielectric layers.
  • Keywords
    Capacitors; Cyclotrons; Degradation; Dielectric substrates; Dielectrics and electrical insulation; EPROM; FETs; Insulator testing; Silicon; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1985.4334089
  • Filename
    4334089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881395